Photomasks used to transfer circuit patterns onto computer chips have a natural roughness that’s ideal for measuring aberrations in extreme ultraviolet (EUV) optics. The technique, developed at the ALS, will be valuable in characterizing coherent light sources and beamline optical systems. https://als.lbl.gov/characterization-of-euv-optics-using-intrinsic-mask-roughness/
January 2019 – July 2022
